Non-Volatile Memory Design Architecture Lead
Compensation
$176k – $322k /yr
Employment type
Full-time
Work setting
On-site
Location
San Jose, CA
Schedule
Day shift
Posted
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Job overview
The Non-Volatile Memory Design Architecture Lead is an onsite role based in San Jose, CA. The base salary range is $176,000 - $322,000 per year, and this role supports the NAND Flash design team at Micron Technology. This role exists to innovate and execute non-volatile memory designs, ensuring best-in-class products in terms of performance, reliability, and power. By leading multi-functional teams and driving architecture decisions, the lead contributes to the development of future memory generations.
What we're looking for
- Skills & competencies
- full-timeday shiftsan jose camicronmemory designarchitecturenand flashengineeringleadershiponsite$176k-$322k/yr
- Work arrangement
- Weekend coverage required
Benefits & perks
- Medical, dental, vision plans, paid time-off, paid holidays, paid family leave
About the employer
Micron Technology, Inc. is hiring for this role. Industry: Semiconductor and Related Device Manufacturing. Sector: 33.
Additional details
- Industry sector
- 33
- Industry
- Semiconductor and Related Device Manufacturing
- Occupation code
- 17-2061.00
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Listing ID: fee586a4-1f60-496c-a785-ae138f99cf47