DRAM Device & Cell Technology Engineer

Job overview

The DRAM Device & Cell Technology Engineer is an onsite role based in Boise, ID, with compensation not specified. This position supports the Micron Technology DRAM and Cell Technology department by optimizing next-generation memory architectures. The role exists to push the boundaries of memory technology through innovation and collaborative research. The engineer will develop cell and access device technologies to improve density and performance, ensuring Micron remains a leader in memory and storage solutions.

What you'll do

• Develop DRAM cell and access device technologies
• conduct silicon experiments
• perform electrical characterization and data analysis
• analyze array-level behaviors
• collaborate with circuit teams
• contribute to technology roadmaps.

What we're looking for

Skills & competencies

full-time

day shift

boise id

micron

dram

semiconductor

device physics

electrical characterization

memory technology

engineering

Work arrangement

• Weekend coverage required

Benefits & perks

• Choice of medical, dental and vision plans, income protection programs, paid family leave, paid time-off program, and paid holidays.

Why this role

Requires M.S. or Ph.D. in Electrical Engineering, Materials Science, or Applied Physics.

About the employer

Micron Technology, Inc. is hiring for this role. Industry: Semiconductor and Related Device Manufacturing. Sector: 33.