Staff Memory Design Engineer (HBM)

Job overview

The Staff Memory Design Engineer (HBM) is an onsite role based in Richardson, TX. Compensation is not specified for this position. This role is responsible for designing and analyzing digital and analog circuits used in memory products. The role exists to drive innovation in future memory generations and contribute to silicon-to-system development. The engineer contributes by collaborating globally across design, verification, and product engineering teams to ensure manufacturable, high-quality solutions.

What you'll do

• Design digital, analog, and memory core circuits using CMOS logic and transistors.
• Create optimized floorplans for circuit placement, routing, power delivery, sense margins, array timing, and die size.
• Conduct circuit simulations using FINESIM, HSPICE, and VERILOG.
• Validate builds through reticle experiments, tape‑out revisions, and simulation‑to‑silicon correlation.
• Manage layout and develop resources.

What we're looking for

Education

Bachelor's degree

Experience

BS or MS in Electrical Engineering or related field plus 6 years of experience in DRAM design, product, or system.

Skills & competencies

full-time

day shift

richardson tx

micron

memory design

hbm

staff engineer

cmos

circuit design

dram

Work arrangement

• Weekend coverage required

About the employer

Micron Technology, Inc. is hiring for this role. Industry: Research and Development in the Physical, Engineering, and Life Sciences (except Nanotechnology and Biotechnology). Sector: 54.