RF/mm-Wave CMOS Power Amplifier Design Engineer

Job overview

The RF/mm-Wave CMOS Power Amplifier Design Engineer role is onsite full-time in Atlanta, GA, with a base salary of $160,000–$225,000 per year. Falcomm develops energy-efficient power amplifier products for semiconductor applications. The engineer designs and develops RF power amplifiers, integrates designs into larger systems, and supports product development from concept through mass production. The work combines hands-on design, prototyping, testing, and technical reviews to advance reliable amplifier products for customer applications.

What you'll do

• Design and develop RF power amplifiers for SATCOM, Wi-Fi, and cellular applications
• collaborate on integration into larger SoC systems
• prototype and test designs for reliability and performance
• present design reviews covering IC, package, electromagnetic simulation, measurement, and thermal considerations
• track semiconductor technology developments
• support product development from concept to mass production.

What we're looking for

Skills & competencies

rf/mm-wave cmos power amplifier design engineer

full-time

onsite

atlanta ga

falcomm

rfic design

mmic design

semiconductor

power amplifiers

soc integration

soi

sige

$160k–$225k/year

Work arrangement

• Weekend coverage required

Benefits & perks

• Equity package
• health, dental, and vision insurance premiums covered
• 401(k)
• flexible paid time off and sick leave
• signing and relocation bonuses.

Why this role

The posting requires a master’s or PhD in Electrical Engineering or a related field, 3+ years of RF power amplifier design experience up to 60 GHz, and PA tapeout experience using SOI or SiGe technologies. U.S. work authorization must meet the stated ITAR eligibility conditions.

About the employer

Falcomm is hiring for this role. Industry: Semiconductor and Related Device Manufacturing. Sector: 33.