Design Engineer Intern, High-Intensity Graphics (HIG) High Bandwidth Memory (HBM)

Job overview

Design Engineer Intern, High-Intensity Graphics (HIG) High Bandwidth Memory (HBM) is an onsite role in Richardson, TX. Compensation is not specified. The internship supports Micron’s HBM Design team, which develops memory solutions for AI, high-performance computing, graphics, and data-center applications. The intern works alongside experienced memory engineers on semiconductor design, simulation, verification, and analysis. The role contributes to product development through circuit and RTL work, automation, technical documentation, and collaboration with design and engineering teams.

What you'll do

• Assist with design, simulation, analysis, and verification of HBM memory and logic circuits
• support RTL development, circuit implementation, timing and power analysis, and functional validation
• develop scripts, automation, and AI-assisted workflows
• collaborate with Design, Verification, Physical Design, CAD, and Product Engineering teams
• document technical work, experimental results, AI-enabled insights, and design methodologies.

What we're looking for

Skills & competencies

design engineer intern

high-intensity graphics

hig

high bandwidth memory

hbm

semiconductor design

rtl

circuit simulation

verification

ai-assisted workflows

richardson tx

micron technology

Work arrangement

• Weekend coverage required

Benefits & perks

• Medical, dental, and vision plan options
• income-protection benefits
• paid family leave
• paid time off
• and paid holidays.

Why this role

Internship for candidates currently pursuing a bachelor’s or master’s degree in Electrical Engineering, Computer Engineering, Computer Science, or a related technical field; includes exposure to semiconductor design tools and AI-assisted workflows.

About the employer

Micron Technology, Inc. is hiring for this role. Industry: Semiconductor and Related Device Manufacturing. Sector: 33.