Engineer, DRAM Device and Cell Technology

Job overview

The Engineer, DRAM Device and Cell Technology is an onsite role based in Boise, ID. Compensation is not specified for this position, which supports the R&D DRAM Device and Cell Technology Group. This role defines and validates future DRAM device and cell technologies. It involves characterizing memory arrays, analyzing electrical behavior, and influencing process and material decisions to improve yield, quality, and performance.

What you'll do

• Define and drive electrical specifications for DRAM and emerging memory technologies.
• Design and implement experiments to optimize cell performance.
• Develop physical and electrical models to identify performance and reliability limiters.
• Create stress methodologies for device reliability evaluation.
• Analyze array-level behavior to root-cause variability and improve yield.

What we're looking for

Skills & competencies

full-time

day shift

boise id

micron

dram

device engineering

semiconductor

r&d

memory technology

onsite

no on-call

Work arrangement

• Weekend coverage required

Benefits & perks

• Medical, dental, and vision plans
• paid family leave
• robust paid time-off program
• paid holidays.

Why this role

Deep focus on DRAM device physics and memory array characterization.

About the employer

Micron Technology, Inc. is hiring for this role. Industry: Semiconductor and Related Device Manufacturing. Sector: 33.