Staff Device Engineer, Technology Development

Job overview

The Staff Device Engineer, Technology Development role is onsite in Milpitas, CA, with an annual salary range of $136,600–$232,200. The position is part of Sandisk's Technology Development Engineering function, working across storage business units, technology development, and manufacturing. The engineer develops NAND memory trims and evaluates performance and reliability to improve flash memory used in high-density storage. The role coordinates testing, data analysis, qualification, and product support with design, process, reliability, and system teams to enable product and process improvements and volume production.

What you'll do

• Develop NAND memory trim
• conduct performance and reliability tests
• analyze and report data to cross-functional teams
• partner with NAND design and system development teams on technology and product development
• coordinate with process, design, reliability, and system groups for device support, qualification, and volume production ramp.

What we're looking for

Skills & competencies

staff device engineer

technology development

nand memory

flash memory

device physics

performance testing

reliability testing

data analysis

milpitas ca

sandisk

annual salary $136,600–$232,200

onsite

full-time

Work arrangement

• Weekend coverage required

Benefits & perks

• Paid vacation and sick leave
• medical, dental, and vision insurance
• life, accident, and disability insurance
• flexible spending and health savings accounts
• employee assistance program
• tuition reimbursement
• transit
• employee stock purchase plan
• 401(k)
• STI plan and possible LTI eligibility.

Why this role

Requires an MS or PhD in Electrical Engineering, Applied Physics, Material Science, or related field and 3+ years of relevant industry experience; semiconductor device physics and advanced process familiarity required.

About the employer

SanDisk is hiring for this role. Industry: Semiconductor and Related Device Manufacturing. Sector: 33.